高带宽逻辑/DRAM融合多媒体芯片的研制

W. Luk, Y. Katayama, W. Hwang, M. Wordeman, T. Kirihata, A. Satoh, S. Munetoh, H. Wong, B. El-Kareh, P. Xiao, R. Joshi
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引用次数: 6

摘要

本文介绍了一种逻辑/DRAM合并多媒体芯片的设计方法和实现方法。该设计基于0.25微米基于dram的CMOS技术,具有4层金属,器件性能增强。多媒体的架构和系统设计的细节在Katayama et. al.(1996)中有描述。目前的芯片包括64兆同步DRAM(由8个8兆SDRAM宏组成的两组)、门阵列存储器控制和总线控制单元、定制设计的8/spl次/32位并行图形处理器、用于与主处理器总线之间数据传输的64位并行端口、用于视频显示的32位串行端口和片上锁相环。多媒体协处理器芯片为外部主机处理器提供高密度统一内存、高总线带宽(峰值4.3 GB/s)和1+GB/s BITBLT处理功能。目前的设计,平面图和布局的结构方式,我们相信,将为其他合并逻辑/DRAM, ASIC+DRAM设计的系统规模集成提供一个通用框架。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of a high bandwidth merged logic/DRAM multimedia chip
This paper describes the design methodology and the implementation of a merged logic/DRAM multimedia chip. The design is based on 0.25 micron DRAM-based CMOS technology with 4-layers of metal with device performance enhancement. Details of the architecture and system design of the multi-media was described in Katayama et. al. (1996). The present chip consists of 64 Mb of synchronous DRAM which is organized in two banks of eight 8 Mb SDRAM macros, a gate-array memory control and bus control unit, a custom-designed 8/spl times/32-bit parallel graphic processor, a 64-bit parallel ports for data transfer to/from the host processor bus, a 32-bit serial port for video display, and on-chip PLL. The multi-media co-processor chip provides high-density unified memory, high bus bandwidth (4.3 GB/s peak) and 1+GB/s BITBLT processing functions for an external host processor. The current design, floorplan and layout are structured in a way that, we believe, will provide a general framework for other merged logic/DRAM, ASIC+DRAM design for system scale integration.
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