一种新颖的1700V RET-IGBT(嵌入式发射极沟槽IGBT)具有创纪录的低VCE(ON)，增强的电流处理能力和短路鲁棒性

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988932

I. Deviny, H. Luo, Q. Xiao, Yao Yao, Chunlin Zhu, L. Ngwendson, Haibo Xiao, X. Dai, Guoyou Liu

{"title":"一种新颖的1700V RET-IGBT(嵌入式发射极沟槽IGBT)具有创纪录的低VCE(ON)，增强的电流处理能力和短路鲁棒性","authors":"I. Deviny, H. Luo, Q. Xiao, Yao Yao, Chunlin Zhu, L. Ngwendson, Haibo Xiao, X. Dai, Guoyou Liu","doi":"10.23919/ISPSD.2017.7988932","DOIUrl":null,"url":null,"abstract":"In this paper, a novel 1700V recessed emitter trench IGBT (RET-IGBT) is proposed. The RET-IGBT features an additional recessed trench between two adjacent active trenches and under the emitter contact, which reduces the drawn trench to trench separation from 6μm to 2μm. Combined with a double-dose carrier storage (CS) layers, the injection enhancement effect is enhanced. As a result, the trade-off relationship between Vce(on) and £off is improved. The fabricated RET-IGBT shows record low Vce(on) of 1.65V at 150A(110A/cm−2), no degradation in breakdown voltage and short circuit performances whilst enhancing the current handling capability in spite of increased current density.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A novel 1700V RET-IGBT (recessed emitter trench IGBT) shows record low VCE(ON), enhanced current handling capability and short circuit robustness\",\"authors\":\"I. Deviny, H. Luo, Q. Xiao, Yao Yao, Chunlin Zhu, L. Ngwendson, Haibo Xiao, X. Dai, Guoyou Liu\",\"doi\":\"10.23919/ISPSD.2017.7988932\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a novel 1700V recessed emitter trench IGBT (RET-IGBT) is proposed. The RET-IGBT features an additional recessed trench between two adjacent active trenches and under the emitter contact, which reduces the drawn trench to trench separation from 6μm to 2μm. Combined with a double-dose carrier storage (CS) layers, the injection enhancement effect is enhanced. As a result, the trade-off relationship between Vce(on) and £off is improved. The fabricated RET-IGBT shows record low Vce(on) of 1.65V at 150A(110A/cm−2), no degradation in breakdown voltage and short circuit performances whilst enhancing the current handling capability in spite of increased current density.\",\"PeriodicalId\":202561,\"journal\":{\"name\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISPSD.2017.7988932\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

本文提出了一种新型的1700V凹槽发射极沟槽型IGBT (RET-IGBT)。RET-IGBT在两个相邻的有源沟槽之间和发射极触点下方增加了一个凹槽，从而将绘制沟槽到沟槽的距离从6μm减少到2μm。与双剂量载流子存储层(CS)相结合，增强了注射增强效果。因此，Vce(on)和£off之间的权衡关系得到了改善。制备的RET-IGBT在150A(110A/cm−2)下显示出1.65V的低Vce(on)，击穿电压和短路性能没有下降，同时增强了电流处理能力，尽管电流密度增加。

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A novel 1700V RET-IGBT (recessed emitter trench IGBT) shows record low VCE(ON), enhanced current handling capability and short circuit robustness

In this paper, a novel 1700V recessed emitter trench IGBT (RET-IGBT) is proposed. The RET-IGBT features an additional recessed trench between two adjacent active trenches and under the emitter contact, which reduces the drawn trench to trench separation from 6μm to 2μm. Combined with a double-dose carrier storage (CS) layers, the injection enhancement effect is enhanced. As a result, the trade-off relationship between Vce(on) and £off is improved. The fabricated RET-IGBT shows record low Vce(on) of 1.65V at 150A(110A/cm−2), no degradation in breakdown voltage and short circuit performances whilst enhancing the current handling capability in spite of increased current density.

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2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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