3-D封装电源器件上可焊金属化的表征

IWIPP 2000. International Workshop on Integrated Power Packaging (Cat. No.00EX426) Pub Date : 2000-07-14 DOI:10.1109/IWIPP.2000.885188

S. Haque, G. Lu

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引用次数: 1

摘要

本文介绍了用于三维封装的两种不同的igbt(绝缘栅双极晶体管)可焊金属化的工艺问题。由于两种器件的钝化材料(Si/sub 3/N/sub 4/和聚酰亚胺)不同，通过溅射的相同金属化工艺导致了不同的接触电阻。分析了产生不同电接触电阻的器件接触片表面成分的XPS和SEM表征。

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Characterization of solderable metallization on power devices for 3-D packaging

This paper presents processing issues of solderable metallization on two different IGBTs (insulated gate bipolar transistors) for three-dimensional packaging. Identical metallization processes via sputtering have resulted in different contact resistances due to the different passivation materials (Si/sub 3/N/sub 4/ and polyimide) of the two devices. XPS and SEM characterization of surface compositions of device contact pads resulting in different electrical contact resistances are analyzed.

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IWIPP 2000. International Workshop on Integrated Power Packaging (Cat. No.00EX426)

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