{"title":"用于毫米波器件应用的高分辨率InP通孔","authors":"K. Hur, R. A. McTaggart, T. Kazior","doi":"10.1109/GAAS.1994.636998","DOIUrl":null,"url":null,"abstract":"A Cl/sub 2/:HBr:BCl/sub 3/:Ar-based reactive ion etch process capable of producing high resolution via holes in InP has been developed. Tapered sidewall profiles are obtained using this process as a result of controlled photoresist mask erosion at an optimized etch condition. To demonstrate feasibility of this process for millimeter wave device applications, single-doped AlInAs/GaInAs/InP HEMTs with individually grounded source finger vias have been fabricated.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"High resolution InP via holes for millimeter wave device applications\",\"authors\":\"K. Hur, R. A. McTaggart, T. Kazior\",\"doi\":\"10.1109/GAAS.1994.636998\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Cl/sub 2/:HBr:BCl/sub 3/:Ar-based reactive ion etch process capable of producing high resolution via holes in InP has been developed. Tapered sidewall profiles are obtained using this process as a result of controlled photoresist mask erosion at an optimized etch condition. To demonstrate feasibility of this process for millimeter wave device applications, single-doped AlInAs/GaInAs/InP HEMTs with individually grounded source finger vias have been fabricated.\",\"PeriodicalId\":328819,\"journal\":{\"name\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1994.636998\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636998","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High resolution InP via holes for millimeter wave device applications
A Cl/sub 2/:HBr:BCl/sub 3/:Ar-based reactive ion etch process capable of producing high resolution via holes in InP has been developed. Tapered sidewall profiles are obtained using this process as a result of controlled photoresist mask erosion at an optimized etch condition. To demonstrate feasibility of this process for millimeter wave device applications, single-doped AlInAs/GaInAs/InP HEMTs with individually grounded source finger vias have been fabricated.
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