用于深度学习推理的相变存储器中突触权值编程的精度

S. Nandakumar, I. Boybat, Jin P. Han, S. Ambrogio, P. Adusumilli, R. Bruce, M. BrightSky, M. Rasch, M. Le Gallo, A. Sebastian
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引用次数: 14

摘要

随着时间的推移,电导状态可以被编程和维持的精度对于基于模拟电阻的存储设备(如相变存储器(PCM))在内存计算应用(如深度学习和科学计算)中的操作至关重要。带闭环反馈的迭代编程是对器件阵列进行编程以获得应用规定的所需电导值的最常用方法。在这项工作中,我们解析地推导了与迭代规划方案相关的精度,并表明它基本上受到读取噪声的限制。估计的编程噪声定量地与含有两种掺杂GST相变材料的>1k PCM器件阵列上的实验测量结果相匹配。我们进一步证明了电导漂移驱动的程序电导状态发散依赖于迭代规划中的反馈时间。此外,我们还研究了与突触权重存储相关的不准确性对深度学习推理的影响。我们通过在基于pcm的DNN推理硬件上编程权重时调整反馈时间,在CIFAR-10、CIFAR-100和PTB基准测试上证明了显著的准确性保持改进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Precision of synaptic weights programmed in phase-change memory devices for deep learning inference
The precision at which the conductance states can be programmed and maintained over time is central to the operation of analog resistance-based memory devices such as phase-change memory (PCM) in in-memory computing applications such as deep learning and scientific computing. Iterative programming with closed loop feedback is the most common approach towards programming an array of devices to achieve the desired conductance values as stipulated by the application. In this work, we analytically derive the precision associated with the iterative programming scheme and show that it is fundamentally limited by the read noise. The estimated programming noise quantitatively matches that measured experimentally on >1k PCM device arrays incorporating two types of doped GST phase-change materials. We further demonstrate that the conductance drift driven divergence of the programmed conductance states depends on the time of feedback in the iterative programming. Moreover, we studied the impact of the inaccuracy associated with synaptic weight storage on deep learning inference. We demonstrate significant accuracy retention improvements on CIFAR-10, CIFAR-100, and PTB benchmarks by tuning the time of feedback when programming weights on PCM-based DNN inference hardware.
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