具有3db带宽>110 GHz和高l波段响应性的锗翅片光电二极管

2023 IEEE Silicon Photonics Conference (SiPhotonics) Pub Date : 2023-04-01 DOI:10.1109/SiPhotonics55903.2023.10141946

D. Steckler, S. Lischke, A. Kroh, A. Peczek, G. Georgieva, L. Zimmermann

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引用次数: 0

摘要

我们提出了一种锗p-i-n光电二极管，在1610 nm处具有超过110 GHz的3db带宽，在l波段波长高达1620 nm处具有>.45 a /W的高响应率，并且在-2V下具有约500 nA的中等暗电流水平。

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Germanium Fin Photodiode with 3dB-Bandwidth >110 GHz and High L-Band Responsivity

We present a germanium p-i-n photodiode with a 3dB-bandwidth beyond 110 GHz at 1610 nm, a high responsivity of >0.45 A/W at L-band wavelengths up to 1620 nm and a moderate dark current level of around 500 nA, all at -2V.

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2023 IEEE Silicon Photonics Conference (SiPhotonics)

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