一种新型的600V分埋p浮层和掺杂沟槽结构

2013 IEEE International Conference of IEEE Region 10 (TENCON 2013) Pub Date : 2013-10-01 DOI:10.1109/TENCON.2013.6718849

Tan Kai-zhou, Tang Zhaohuan, Luo Jun, Hu Shendong, Shen Jun, Cui Wei, Zhang Jin

{"title":"一种新型的600V分埋p浮层和掺杂沟槽结构","authors":"Tan Kai-zhou, Tang Zhaohuan, Luo Jun, Hu Shendong, Shen Jun, Cui Wei, Zhang Jin","doi":"10.1109/TENCON.2013.6718849","DOIUrl":null,"url":null,"abstract":"A novel low on-resistance 600V structure with Split P-Buried Floating Layer(SBFL) and doping trench is proposed and demonstrated by simulation. This novel structure can overcome big reverse leakage current problem of conventional SBFL, and keep its low on-resistance advantage. Its specific on-resistance is 43% less than ideal parallel-plane junction stucture at 600V blocking voltage, from 73.3 mO.cm2 to 41.7 mO.cm2.","PeriodicalId":425023,"journal":{"name":"2013 IEEE International Conference of IEEE Region 10 (TENCON 2013)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A novel 600V structure with Split P-Buried Floating Layer and doping trench\",\"authors\":\"Tan Kai-zhou, Tang Zhaohuan, Luo Jun, Hu Shendong, Shen Jun, Cui Wei, Zhang Jin\",\"doi\":\"10.1109/TENCON.2013.6718849\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel low on-resistance 600V structure with Split P-Buried Floating Layer(SBFL) and doping trench is proposed and demonstrated by simulation. This novel structure can overcome big reverse leakage current problem of conventional SBFL, and keep its low on-resistance advantage. Its specific on-resistance is 43% less than ideal parallel-plane junction stucture at 600V blocking voltage, from 73.3 mO.cm2 to 41.7 mO.cm2.\",\"PeriodicalId\":425023,\"journal\":{\"name\":\"2013 IEEE International Conference of IEEE Region 10 (TENCON 2013)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference of IEEE Region 10 (TENCON 2013)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TENCON.2013.6718849\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of IEEE Region 10 (TENCON 2013)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.2013.6718849","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种新型的低导通电阻600V结构，该结构采用裂埋p浮层(SBFL)和掺杂沟槽。这种新颖的结构克服了传统SBFL反漏电流大的问题，并保持了其低导通电阻的优点。在600V阻断电压下，其比导通电阻从73.3 mO.cm2降至41.7 mO.cm2，比理想并联平面结结构低43%。

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A novel 600V structure with Split P-Buried Floating Layer and doping trench

A novel low on-resistance 600V structure with Split P-Buried Floating Layer(SBFL) and doping trench is proposed and demonstrated by simulation. This novel structure can overcome big reverse leakage current problem of conventional SBFL, and keep its low on-resistance advantage. Its specific on-resistance is 43% less than ideal parallel-plane junction stucture at 600V blocking voltage, from 73.3 mO.cm2 to 41.7 mO.cm2.

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2013 IEEE International Conference of IEEE Region 10 (TENCON 2013)

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