使用结构优化和Volterra分析的gm-C双滤波器设计的线性准则

P. Crombez, J. Craninckx, P. Wambacq, M. Steyaert
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引用次数: 5

摘要

在模拟设计中,很好地理解非线性行为是至关重要的,应该在架构级别的设计流程的早期考虑到这一点。本文提出了一种基于Nauta公司晶体管的gm-C低通滤波器双二次段的最佳线性设计方法。首先,通过宏观模型将Volterra分析从电路层面扩展到架构层面。在电路级,Volterra用于优化和调整晶体管的尺寸,而在架构级,Volterra系列定义了biquad的主要非线性贡献者,从而允许设置最佳滤波器参数。然后将这些结果转化为在架构级别的全带宽中实现最佳线性的设计规则。最后,利用电路仿真进行了自下而上的验证,以确定最优方案。这两种方法都应用于在0.13 μ m CMOS中设计的10 MHz巴特沃斯滤波器。它实现67 dB的SFDR,并从1.2 V电源消耗3 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Linearity guidelines for gm-C biquad filter design using architecture optimization with Volterra analysis
In analog design, a good understanding of nonlinear behavior is crucial and should be taken into account early in the design flow at the architectural level. This paper presents the design towards optimal linearity of a biquadratic section of a gm-C low-pass filter based on Nauta's transconductor. First, Volterra analysis is extended from circuit to architectural level by means of macro models. At circuit level, Volterra is used to optimize and size the transconductor while at architectural level, Volterra series define the main nonlinearity contributors of the biquad and hence allow to set the optimal filter parameters. These results are then translated into a design rule for optimal linearity in the full bandwidth at architectural level. Finally, a bottom-up verification is performed using circuit simulations to confirm the optimum. Both methods are applied on a 10 MHz Butterworth filter, designed in 0.13 mum CMOS. It achieves a SFDR of 67 dB and consumes 3 mW from a 1.2 V supply.
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