{"title":"用于传感器应用的低功耗MEMS振荡器","authors":"C. Do, A. Erbes, Jize Yan, A. Seshia","doi":"10.1109/EFTF.2014.7331527","DOIUrl":null,"url":null,"abstract":"In this paper, we report on the design of a low power CMOS oscillator front-end interface circuit for micromachined resonant sensors. The circuits are fabricated in a standard 0.35 μm process while the MEMS resonators are fabricated in a SOI-MEMS foundry process with the two die electrically integrated through wirebonding in a ceramic package. The oscillator core draws less than 1μA at 1.2V supply while demonstrating a short-term frequency stability of less than 0.5 ppm.","PeriodicalId":129873,"journal":{"name":"2014 European Frequency and Time Forum (EFTF)","volume":"2004 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Low power MEMS oscillators for sensor applications\",\"authors\":\"C. Do, A. Erbes, Jize Yan, A. Seshia\",\"doi\":\"10.1109/EFTF.2014.7331527\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report on the design of a low power CMOS oscillator front-end interface circuit for micromachined resonant sensors. The circuits are fabricated in a standard 0.35 μm process while the MEMS resonators are fabricated in a SOI-MEMS foundry process with the two die electrically integrated through wirebonding in a ceramic package. The oscillator core draws less than 1μA at 1.2V supply while demonstrating a short-term frequency stability of less than 0.5 ppm.\",\"PeriodicalId\":129873,\"journal\":{\"name\":\"2014 European Frequency and Time Forum (EFTF)\",\"volume\":\"2004 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 European Frequency and Time Forum (EFTF)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EFTF.2014.7331527\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 European Frequency and Time Forum (EFTF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EFTF.2014.7331527","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low power MEMS oscillators for sensor applications
In this paper, we report on the design of a low power CMOS oscillator front-end interface circuit for micromachined resonant sensors. The circuits are fabricated in a standard 0.35 μm process while the MEMS resonators are fabricated in a SOI-MEMS foundry process with the two die electrically integrated through wirebonding in a ceramic package. The oscillator core draws less than 1μA at 1.2V supply while demonstrating a short-term frequency stability of less than 0.5 ppm.
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