一种利用Au-Al薄膜在大面积大功率器件与内部Mo电极之间进行低温扩散连接的新技术

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509506

J. Onuki, M. Satou, S. Murakami, T. Morita, T. Yatsuo

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引用次数: 3

摘要

为了实现大面积、大功率的器件，研究了器件两侧Al电极与内部镀au的Mo电极箔之间的低温扩散键合。在573 K以下，由于形成了金铝金属间化合物，形成了键合。在保持接触均匀的情况下大幅减少安装力也是可能的。从冶金学的角度对键合式装置的可靠性进行了预测。

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A new low temperature diffusion bonding technology between large-area, high-power devices and internal Mo electrodes using Au-Al films

To realize large-area, high-power devices, low temperature diffusion bonding between Al electrodes on both sides of the device and Au-plated Mo internal electrode foils has been investigated. Bonding was feasible below 573 K due to the formation of Au-Al intermetallic compound. Substantial reduction of the mounting force while keeping contact uniform was also possible. Reliability of the bond type devices is predicted from metallurgical viewpoint.

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8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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