mos薄结构在近毫米波范围内产生谐波

1981 International Conference on Submillimeter Waves and Their Applications Pub Date : 1981-12-01 DOI:10.1109/ICSWA.1981.9335219

U. Lieneweg, J. Maserjian

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引用次数: 1

摘要

描述了200 - 600ghz范围内的倍频概念。它们基于mos二极管，具有极薄的氧化层和硅外延层。虽然目标是平面集成阵列，但第一次实验是用单个晶须耦合二极管完成的。

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Harmonic Generation in the Near-Millimeter-Wave Range by Thin MOS-Structures

Concepts for frequency multiplication into the range of 200 - 600 GHz are described. They are based on MOS-diodes with extremely thin oxide- and Si-epi-layers. While the goal is planar integrated arrays, the first experiments are done with individual whisker-coupled diodes.

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1981 International Conference on Submillimeter Waves and Their Applications

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