正阴离子掺杂对铁电HfO2形成影响的一般关系

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838477

L. Xu, S. Shibayama, Kazutaka Izukashi, T. Nishimura, T. Yajima, S. Migita, A. Toriumi

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引用次数: 19

摘要

本文讨论了正离子和阴离子掺杂对HfO2对铁电跃迁的影响，为HfO2铁电性的精确设计提供了有益的指导。此外，铁电n掺杂HfO2已被证明是铁电场效应晶体管(fefet)的氧化物半导体上的栅极介电膜。

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General relationship for cation and anion doping effects on ferroelectric HfO2 formation

This work discusses the general relationship for cation and anion doping effects on the HfO2 para-/ferroelectric transition, which will provide us a helpful instruction for precise HfO2 ferroelectricity design. In addition, ferroelectric N-doped HfO2 has been demonstrated as a gate dielectric film on an oxide semiconductor for ferroelectric field-effect transistors (FeFETs).

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2016 IEEE International Electron Devices Meeting (IEDM)

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