基于NBTI退化的pMOSFET时钟偏差分析

Yan Ling Wang, Xiao Jin Li, Haiguang Guo, Yanling Shi
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引用次数: 0

摘要

本文利用曲面拟合的方法,建立了一套对PMOS晶体管阈值电压(AVth)、负载电容(CL)和输入跃迁(ti)变化敏感的计算公式,用于计算CMOS逆变器的传播时延。与传统的关注负载电容和输入过渡不同,我们提出的模型更关注由NBTI退化引起的AVth变化对传播延迟的影响。此外,本文还提出了一个基于所提出的时延模型计算时钟树网络路径时延和时钟偏差的框架。为了验证我们提出的模型和方法,我们使用45纳米CMOS工艺技术对基准电路(s38417)进行了spice级仿真,并与我们的模型计算进行了比较,结果表明我们的模型和方法可以计算出阈值电压偏移引起的额外路径延迟和时钟偏差。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Clock skew analysis based on NBTI degeneration of pMOSFET
In this paper, a set of formulas which are sensitive to the shift in threshold voltage (AVth) of PMOS transistor, load capacitance (CL), and input transition (ti) have been explored to calculate the propagation delay of CMOS inverter using curved surfaces fitting. Different from conventional of focusing on load capacitance and input transition, our proposed model pay more attention to the impact of AVth variation caused by NBTI degeneration on the propagation delay. Moreover, this paper has also proposed a framework to calculate the path delay and clock skew of clock tree network based on the proposed delay model. In order to validate our proposed models and methods, the SPICE-level simulation of the benchmark circuit (s38417) has been compared with our model calculation using a 45-nm CMOS process technology, the results show that our models and methods can calculate the extra path delay and clock skew caused by the shift in threshold voltage.
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