Wayesh Qarony, A. Mayet, Ekaterina Ponizovskaya Devine, S. Ghandiparsi, Cesar Bartolo-Perez, Ahasan Ahamed, Amita Rawat, H. Mamtaz, Toshishige Yamada, Shih-Yuan Wang, M. Islam
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Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures
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