掺杂硼和镍稀释硅微晶体中载流子的自旋相关输运

2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2018-04-01 DOI:10.1109/ELNANO.2018.8477452

A. Druzhinin, Y. Khoverko, I. Ostrovskii, S. Yatsukhnenko

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引用次数: 0

摘要

研究了不同杂质浓度$10^{18}- 5\ × 10^{18}$ cm−3的硅p型晶须在4.2 ~ 77 K的纵向磁场0 ~ 14 T下，经镍稀释后的金属介电体在硅中的负磁电阻转变。较大的负磁阻值对应于电子杂质态上的跳变电导。为了预测晶体的磁阻，由于晶体在低温下的跳变电导性质，必须考虑晶体的极化分量

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Spin-Dependent Transport of Charge Carriers in Silicon Microcrystals Doped with Boron and Diluted with Nickel

Negative magnetoresistance of Si p-type whiskers with different impurity concentration $10^{18} - 5\times 10^{18}$ cm−3 which corresponds to the transition of a metal-dielectric in silicon and diluted with nickel were studied in longitudinal magnetic field 0–14 T in the temperature range 4.2–77 K. The large negative magnetoresistance values correspond to hopping conductance on the twice occupied by electrons impurity states. It is established that in order to predict the magnetoresistance of crystals, it is necessary to take into account the polarization component due to the nature of the hopping conductance at low temperatures

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2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO)

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