{"title":"一个2周期1 Mbit 4路集关联4路交错多处理器L2目录与数组访问/周期2.5 nsec","authors":"G.M. Lattimore, M. Kumar, J. M. Poplawski","doi":"10.1109/MTDT.1995.518085","DOIUrl":null,"url":null,"abstract":"An experimental 2-cycle, 1-Mbit, 4-way set-associative, 4-way interleave, multiprocessor L2 directory with array access and cycle time equal to 2.5 ns is described. The directory function has three components: (1) address transmission and arbitration around a 17.3/spl times/17.3 chip (/spl sim/1/2 cycle), (2) directory array access (1 full cycle), and (3) tag compare (/spl sim/1/2 cycle). The directory array access design uses a combination of self-resetting and synchronous techniques that allow the array access to span 2 clock cycles even though the array can be pipelined at a single cycle frequency. The combination of synchronous techniques with self-resetting circuits allows the array cycle time to functionally change with the machine cycle time, yielding a greater sense-amplifier margin at longer cycles while maintaining the pipelining benefits of self-resetting circuitry. The process that the design is based upon is a 0.5-micron technology with a 0.25-micron effective gate length and 5 layers of metal. The SRAM cell size is 4.6/spl times/7.2 microns/sup 2/, a full 6-transistor cell with a single layer of poly, and a local area interconnect using a damascene tungsten process. The total directory area is 4 interleaves/spl times/5.6 mm/spl times/5.3 mm = 118.7 mm/sup 2/.","PeriodicalId":318070,"journal":{"name":"Records of the 1995 IEEE International Workshop on Memory Technology, Design and Testing","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 2 cycle 1 Mbit 4 way set associative 4 way interleave multi-processor L2 directory with array access/cycle 2.5 nsec\",\"authors\":\"G.M. Lattimore, M. Kumar, J. M. Poplawski\",\"doi\":\"10.1109/MTDT.1995.518085\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An experimental 2-cycle, 1-Mbit, 4-way set-associative, 4-way interleave, multiprocessor L2 directory with array access and cycle time equal to 2.5 ns is described. The directory function has three components: (1) address transmission and arbitration around a 17.3/spl times/17.3 chip (/spl sim/1/2 cycle), (2) directory array access (1 full cycle), and (3) tag compare (/spl sim/1/2 cycle). The directory array access design uses a combination of self-resetting and synchronous techniques that allow the array access to span 2 clock cycles even though the array can be pipelined at a single cycle frequency. The combination of synchronous techniques with self-resetting circuits allows the array cycle time to functionally change with the machine cycle time, yielding a greater sense-amplifier margin at longer cycles while maintaining the pipelining benefits of self-resetting circuitry. The process that the design is based upon is a 0.5-micron technology with a 0.25-micron effective gate length and 5 layers of metal. The SRAM cell size is 4.6/spl times/7.2 microns/sup 2/, a full 6-transistor cell with a single layer of poly, and a local area interconnect using a damascene tungsten process. The total directory area is 4 interleaves/spl times/5.6 mm/spl times/5.3 mm = 118.7 mm/sup 2/.\",\"PeriodicalId\":318070,\"journal\":{\"name\":\"Records of the 1995 IEEE International Workshop on Memory Technology, Design and Testing\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Records of the 1995 IEEE International Workshop on Memory Technology, Design and Testing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTDT.1995.518085\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 1995 IEEE International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.1995.518085","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2 cycle 1 Mbit 4 way set associative 4 way interleave multi-processor L2 directory with array access/cycle 2.5 nsec
An experimental 2-cycle, 1-Mbit, 4-way set-associative, 4-way interleave, multiprocessor L2 directory with array access and cycle time equal to 2.5 ns is described. The directory function has three components: (1) address transmission and arbitration around a 17.3/spl times/17.3 chip (/spl sim/1/2 cycle), (2) directory array access (1 full cycle), and (3) tag compare (/spl sim/1/2 cycle). The directory array access design uses a combination of self-resetting and synchronous techniques that allow the array access to span 2 clock cycles even though the array can be pipelined at a single cycle frequency. The combination of synchronous techniques with self-resetting circuits allows the array cycle time to functionally change with the machine cycle time, yielding a greater sense-amplifier margin at longer cycles while maintaining the pipelining benefits of self-resetting circuitry. The process that the design is based upon is a 0.5-micron technology with a 0.25-micron effective gate length and 5 layers of metal. The SRAM cell size is 4.6/spl times/7.2 microns/sup 2/, a full 6-transistor cell with a single layer of poly, and a local area interconnect using a damascene tungsten process. The total directory area is 4 interleaves/spl times/5.6 mm/spl times/5.3 mm = 118.7 mm/sup 2/.