用均匀区熔再结晶法制备高压集成电路用SOI结构

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509484

J. Dilhac, D. Zerrouk, C. Ganibal, P. Rossel, M. Bafleur

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引用次数: 5

摘要

我们提出了一种利用一组卤钨灯，通过表面熔化和凝固的方法，在局部埋藏的氧化层上形成厚硅膜的新实验结果。该技术的目的是为高压智能电源应用获得具有成本效益的“部分SOI”衬底。在SOI区和种子区进行了化学缺陷揭示。n沟道mosfet也已制成。晶体学和电学质量似乎足以用于器件加工。

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Fabrication of SOI structures by uniform zone melting recrystallization for high voltage ICs

We present new experimental results about a method for creating thick silicon films on localized buried oxide layers, by superficial melting and solidification using a bank of tungsten halogen lamps. The purpose of this technique is to obtain cost-effective "partially SOI" substrates for high voltage smart power applications. Chemical defect revelation has been carried out in the SOI and seeded regions. N-channel MOSFETs have also been fabricated. It appears that crystallographic and electrical quality is sufficient for device processing.

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来源期刊

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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