瞬态铜直接键合制备Cu-Cu接头的电迁移和温度循环试验

K. Shie, Po-Ning Hsu, Yu-Jin Li, K. Tu, B. Lin, Chia-Cheng Chang, Chih Chen
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引用次数: 5

摘要

由于Cu-Cu键合是3D集成电路封装的关键技术,其可靠性将成为未来的问题。在本研究中,采用瞬时键合工艺制备了带下填料的Cu-Cu接头,键合条件为31 ~ 90 MPa、300℃、10 ~ 30 s。一些样品进行了两种可靠性测试:温度循环测试(TCT)和电迁移测试(EM)。这些样品通过了1000次TCT循环,测得的电磁寿命比相同尺寸的焊点至少长3倍。采用截面图和有限元分析对可靠性试验失效机理进行了分析。在TCT中,由于与相邻结构相比,结合界面相对较弱,因此在结合界面处形成裂纹。在电磁测试中,在电流拥挤的接头钝化口处形成空洞。本研究为Cu/有机介电杂化键合结构的可靠性提供了一个基本的认识。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electromigration and Temperature Cycling Tests of Cu-Cu Joints Fabricated by Instant Copper Direct Bonding
Because Cu-Cu bonding is the key technique in 3D IC packaging, its reliabilities will become issues in the future. In this study, Cu-Cu joints with underfill was fabricated by using instant bonding process, in which bonding conditions were under 31∼90 MPa at 300 °C for 10∼30 s. Several samples underwent two reliability tests: temperature cycling test (TCT) and electromigration (EM) test. These samples passed 1000 cycles TCT, and the measured EM life time was least 3 times longer than that of solder joints with similar dimension. Failure mechanisms of reliability tests were examined by cross-section images and finite element analysis. In TCT, cracks were formed at bonding interface because it is relative weak compared to the neighboring structures. For EM tests, voids were formed at passivation opening of joints with current crowding. The current study provides a fundamental understanding in the reliabilities of Cu/organic dielectric hybrid bonding structures.
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