{"title":"盲目地查找/修改晶体管参数时的零值","authors":"R. Hashemian","doi":"10.1109/INFOCT.2018.8356863","DOIUrl":null,"url":null,"abstract":"Rapid growth in electronic technology makes it difficult to keep track of the device modeling for linear analysis and design. This is particularly hard for MOS transistors. The problem is even more crucial for training engineering students, where they need to be able to hand calculate, put it into circuit format and estimate the design parameters. With transistors model parameters that may run into pages for today's nanotechnology, manually identify the model components and come up with linear equivalent circuits is not easy although it may be a routine data crunching procedure for a modern circuit simulator. One way to get around the problem is to follow two paths. First simulate, or experiment with, the circuit in its original (nonlinear) form, and keep it as the “model”. In the second step, adopt a proper linearizing scheme for the transistors manually, and then modify the model parameters based on the responses received from the model circuit. In our proposed method we do exactly this by using FNPs to modify the parameters in the linearized circuit until the response from the model and that of the linearized circuit fit together.","PeriodicalId":376443,"journal":{"name":"2018 International Conference on Information and Computer Technologies (ICICT)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Nullors in finding/modifying transistor parameters, blindly\",\"authors\":\"R. Hashemian\",\"doi\":\"10.1109/INFOCT.2018.8356863\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Rapid growth in electronic technology makes it difficult to keep track of the device modeling for linear analysis and design. This is particularly hard for MOS transistors. The problem is even more crucial for training engineering students, where they need to be able to hand calculate, put it into circuit format and estimate the design parameters. With transistors model parameters that may run into pages for today's nanotechnology, manually identify the model components and come up with linear equivalent circuits is not easy although it may be a routine data crunching procedure for a modern circuit simulator. One way to get around the problem is to follow two paths. First simulate, or experiment with, the circuit in its original (nonlinear) form, and keep it as the “model”. In the second step, adopt a proper linearizing scheme for the transistors manually, and then modify the model parameters based on the responses received from the model circuit. In our proposed method we do exactly this by using FNPs to modify the parameters in the linearized circuit until the response from the model and that of the linearized circuit fit together.\",\"PeriodicalId\":376443,\"journal\":{\"name\":\"2018 International Conference on Information and Computer Technologies (ICICT)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Information and Computer Technologies (ICICT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INFOCT.2018.8356863\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Information and Computer Technologies (ICICT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INFOCT.2018.8356863","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nullors in finding/modifying transistor parameters, blindly
Rapid growth in electronic technology makes it difficult to keep track of the device modeling for linear analysis and design. This is particularly hard for MOS transistors. The problem is even more crucial for training engineering students, where they need to be able to hand calculate, put it into circuit format and estimate the design parameters. With transistors model parameters that may run into pages for today's nanotechnology, manually identify the model components and come up with linear equivalent circuits is not easy although it may be a routine data crunching procedure for a modern circuit simulator. One way to get around the problem is to follow two paths. First simulate, or experiment with, the circuit in its original (nonlinear) form, and keep it as the “model”. In the second step, adopt a proper linearizing scheme for the transistors manually, and then modify the model parameters based on the responses received from the model circuit. In our proposed method we do exactly this by using FNPs to modify the parameters in the linearized circuit until the response from the model and that of the linearized circuit fit together.