{"title":"基于神经元- mos DLC的GF(3m)收缩并联倍增器","authors":"O. Mirmotahari, Y. Berg","doi":"10.1109/ISMVL.2004.1319932","DOIUrl":null,"url":null,"abstract":"In this paper, a parallel input/output modulo multiplier, which is applied to the AOTP (all one or two polynomials) multiplicative algorithm over GF(3/sup m/), has been proposed using a neuron-MOS down-literal circuit in voltage mode. The three-valued input of the proposed multiplier is modulated by using a neuron-MOS down-literal circuit and the multiplication and addition gates are implemented by the selecting of the three-valued input signals transformed by the module. The proposed circuits are simulated with the electrical parameter of a standard 0.35 /spl mu/m CMOS N-well doubly-poly four-metal technology and a single +3 V supply voltage. In the simulation result, the multiplier shows 4 /spl mu/W power consumption and 3 MHz sampling rate and maintains a output voltage level within /spl plusmn/0.1 V.","PeriodicalId":284925,"journal":{"name":"IEEE International Symposium on Multiple-Valued Logic","volume":"138 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Systolic Parallel Multiplier over GF(3m) Using Neuron-MOS DLC\",\"authors\":\"O. Mirmotahari, Y. Berg\",\"doi\":\"10.1109/ISMVL.2004.1319932\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a parallel input/output modulo multiplier, which is applied to the AOTP (all one or two polynomials) multiplicative algorithm over GF(3/sup m/), has been proposed using a neuron-MOS down-literal circuit in voltage mode. The three-valued input of the proposed multiplier is modulated by using a neuron-MOS down-literal circuit and the multiplication and addition gates are implemented by the selecting of the three-valued input signals transformed by the module. The proposed circuits are simulated with the electrical parameter of a standard 0.35 /spl mu/m CMOS N-well doubly-poly four-metal technology and a single +3 V supply voltage. In the simulation result, the multiplier shows 4 /spl mu/W power consumption and 3 MHz sampling rate and maintains a output voltage level within /spl plusmn/0.1 V.\",\"PeriodicalId\":284925,\"journal\":{\"name\":\"IEEE International Symposium on Multiple-Valued Logic\",\"volume\":\"138 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Symposium on Multiple-Valued Logic\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISMVL.2004.1319932\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Symposium on Multiple-Valued Logic","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISMVL.2004.1319932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Systolic Parallel Multiplier over GF(3m) Using Neuron-MOS DLC
In this paper, a parallel input/output modulo multiplier, which is applied to the AOTP (all one or two polynomials) multiplicative algorithm over GF(3/sup m/), has been proposed using a neuron-MOS down-literal circuit in voltage mode. The three-valued input of the proposed multiplier is modulated by using a neuron-MOS down-literal circuit and the multiplication and addition gates are implemented by the selecting of the three-valued input signals transformed by the module. The proposed circuits are simulated with the electrical parameter of a standard 0.35 /spl mu/m CMOS N-well doubly-poly four-metal technology and a single +3 V supply voltage. In the simulation result, the multiplier shows 4 /spl mu/W power consumption and 3 MHz sampling rate and maintains a output voltage level within /spl plusmn/0.1 V.