侧信道攻击和未来的非易失性存储器

International Conference on Compilers, Architecture, and Synthesis for Embedded Systems Pub Date : 2012-10-07 DOI:10.1145/2380403.2380413

Z. Dyka, C. Walczyk, D. Walczyk, C. Wenger, P. Langendörfer

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引用次数: 4

摘要

在本文中，我们描述了一种基于金属-绝缘体-金属的新型非易失性存储器，与标准闪存相比，它提供了性能优势。此外，更重要的是，它在侧信道攻击方面具有一些优势，即其结构默认阻止光学分析。

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Side channel attacks and the non volatile memory of the future

In this paper, we describe a new non-volatile memory, based on metal-insulator-metal that provides performance benefits compared to standard Flash memory. In addition and more importantly, it comes with some advantages with respect to side channel attacks, i.e., its structure prevents by default optical analysis.

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International Conference on Compilers, Architecture, and Synthesis for Embedded Systems

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