{"title":"基于激光的集成电路缺陷定位","authors":"E. Cole","doi":"10.1109/IEDM.2006.346968","DOIUrl":null,"url":null,"abstract":"The explosion in complexity of modern ICs resulting from reduced feature sizes, circuit density, and sophisticated electrical stimulus has made failure analysis and defect localization extremely difficult. Dense metallization and flip-chip packaging can leave only the backside of the IC available for interrogation. Laser-based methods provide some of the powerful tools analysts depend on to overcome these obstacles","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Laser-Based Defect Localization on Integrated Circuits\",\"authors\":\"E. Cole\",\"doi\":\"10.1109/IEDM.2006.346968\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The explosion in complexity of modern ICs resulting from reduced feature sizes, circuit density, and sophisticated electrical stimulus has made failure analysis and defect localization extremely difficult. Dense metallization and flip-chip packaging can leave only the backside of the IC available for interrogation. Laser-based methods provide some of the powerful tools analysts depend on to overcome these obstacles\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346968\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346968","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Laser-Based Defect Localization on Integrated Circuits
The explosion in complexity of modern ICs resulting from reduced feature sizes, circuit density, and sophisticated electrical stimulus has made failure analysis and defect localization extremely difficult. Dense metallization and flip-chip packaging can leave only the backside of the IC available for interrogation. Laser-based methods provide some of the powerful tools analysts depend on to overcome these obstacles