一种适应自热行为的改进finfet 1/f噪声模型

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2018-11-01 DOI:10.1109/CICTA.2018.8706065

Zihan Luo, Jun Liu, Wenyong Zhou, Zhanfei Chen

{"title":"一种适应自热行为的改进finfet 1/f噪声模型","authors":"Zihan Luo, Jun Liu, Wenyong Zhou, Zhanfei Chen","doi":"10.1109/CICTA.2018.8706065","DOIUrl":null,"url":null,"abstract":"Due to miniature dimension and limited thermal conductivity of silicon material, the performance of FinFETs is strongly influenced by self-heating effect, and is not suitable for conventional 1/f noise models. This study presents a new 1/f noise model for FinFETs to accommodate device temperature rise due to self-heating. This model can more realistically characterize the performance of small-size devices.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An Improved 1/f Noise Model for FinFETs Accommodating Self-Heating Behaviors\",\"authors\":\"Zihan Luo, Jun Liu, Wenyong Zhou, Zhanfei Chen\",\"doi\":\"10.1109/CICTA.2018.8706065\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Due to miniature dimension and limited thermal conductivity of silicon material, the performance of FinFETs is strongly influenced by self-heating effect, and is not suitable for conventional 1/f noise models. This study presents a new 1/f noise model for FinFETs to accommodate device temperature rise due to self-heating. This model can more realistically characterize the performance of small-size devices.\",\"PeriodicalId\":186840,\"journal\":{\"name\":\"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICTA.2018.8706065\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICTA.2018.8706065","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

由于硅材料的微小尺寸和有限的导热性，finfet的性能受到自热效应的强烈影响，并且不适合传统的1/f噪声模型。本研究提出了一种新的1/f噪声模型，用于finfet，以适应由于自加热引起的器件温升。这个模型可以更真实地描述小尺寸设备的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

An Improved 1/f Noise Model for FinFETs Accommodating Self-Heating Behaviors

Due to miniature dimension and limited thermal conductivity of silicon material, the performance of FinFETs is strongly influenced by self-heating effect, and is not suitable for conventional 1/f noise models. This study presents a new 1/f noise model for FinFETs to accommodate device temperature rise due to self-heating. This model can more realistically characterize the performance of small-size devices.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

自引率

0.00%

发文量