商用富阱高电阻SOI晶圆的RF SOI CMOS技术

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404404

K. Ben Ali, C. Roda Neve, A. Gharsallah, J. Raskin

{"title":"商用富阱高电阻SOI晶圆的RF SOI CMOS技术","authors":"K. Ben Ali, C. Roda Neve, A. Gharsallah, J. Raskin","doi":"10.1109/SOI.2012.6404404","DOIUrl":null,"url":null,"abstract":"In this paper we aim at comparing the static and RF performances of passive and active fully-depleted (FD) SOI MOSFETs fabricated on top of either a standard or a trap-rich HR-SOI UNIBOND wafer both provided by SOITEC.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"RF SOI CMOS technology on commercial trap-rich high resistivity SOI wafer\",\"authors\":\"K. Ben Ali, C. Roda Neve, A. Gharsallah, J. Raskin\",\"doi\":\"10.1109/SOI.2012.6404404\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we aim at comparing the static and RF performances of passive and active fully-depleted (FD) SOI MOSFETs fabricated on top of either a standard or a trap-rich HR-SOI UNIBOND wafer both provided by SOITEC.\",\"PeriodicalId\":306839,\"journal\":{\"name\":\"2012 IEEE International SOI Conference (SOI)\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International SOI Conference (SOI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2012.6404404\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2012.6404404","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 17

摘要

在本文中，我们旨在比较在SOITEC提供的标准或富陷阱的ir -SOI UNIBOND晶圆上制造的无源和有源完全耗尽(FD) SOI mosfet的静态和射频性能。

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RF SOI CMOS technology on commercial trap-rich high resistivity SOI wafer

In this paper we aim at comparing the static and RF performances of passive and active fully-depleted (FD) SOI MOSFETs fabricated on top of either a standard or a trap-rich HR-SOI UNIBOND wafer both provided by SOITEC.

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2012 IEEE International SOI Conference (SOI)

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