带边带选择的全单片单边带上变频混频器

Min Wang, C. Saavedra
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引用次数: 2

摘要

提出了一种具有边带选择能力的单边带上变频混频器。边带选择是通过开关网络将I或Q差分中频信号的极性反转到上变频器来完成的。混频器工作在5 GHz的本端频率和100 MHz的中频,因此它产生5.1 GHz的上边带和4.9 GHz的下边带。实验结果表明,该混频器的转换增益超过12 dB,其IP1dB为−12 dBm, IIP3为−5 dBm。上变频器OP1dB为0 dBm, OIP3为+6.5 dBm。该芯片采用标准的130纳米CMOS工艺制造,总直流功率为26 mW,电路核心面积为0.49 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fully monolithic single-sideband upconverter mixer with sideband selection
A single-sideband upconverter mixer with sideband selection capability is presented. Sideband selection is accomplished by inverting the polarity of either the I or Q differential IF signals into the upconverter by means of a switch network. The mixer operates at an LO frequency of 5 GHz and an IF of 100 MHz, and thus it produces an upper sideband at 5.1 GHz and a lower sideband at 4.9 GHz. Experimental results show that the mixer has a conversion gain of over 12 dB and that its IP1dB is −12 dBm and its IIP3 is −5 dBm. The OP1dB and OIP3 of the upconverter are 0 dBm and +6.5 dBm, respectively. The chip was fabricated using a standard 130 nm CMOS process, it consumes a total of 26 mW of dc power and the circuit core occupies an area of 0.49 mm2.
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