具有超低电流失配的 CMOS 充电泵

2022 IEEE 5th International Conference on Knowledge Innovation and Invention (ICKII ) Pub Date : 2022-07-22 DOI:10.1109/ICKII55100.2022.9983569

Chun-Chieh Chen, Nan-Ku Lu

{"title":"具有超低电流失配的 CMOS 充电泵","authors":"Chun-Chieh Chen, Nan-Ku Lu","doi":"10.1109/ICKII55100.2022.9983569","DOIUrl":null,"url":null,"abstract":"We propose an ultra-low current mismatch CMOS charge pump. With a cascode gain-boosting technique, the proposed charge pump obtains an ultra-high equivalent output resistance over a wide output-voltage range. A current mismatch between the discharging and charging current of less than 0.015 % has been simulated by using a 0.18-μm mixedsignal 1P6M 1.8-V CMOS process. The output current and the output voltage ranges of the proposed charge pump are 600 μA and 0.38−1.41 V, respectively.","PeriodicalId":352222,"journal":{"name":"2022 IEEE 5th International Conference on Knowledge Innovation and Invention (ICKII )","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"CMOS Charge Pump with Ultra-Low Current Mismatch\",\"authors\":\"Chun-Chieh Chen, Nan-Ku Lu\",\"doi\":\"10.1109/ICKII55100.2022.9983569\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose an ultra-low current mismatch CMOS charge pump. With a cascode gain-boosting technique, the proposed charge pump obtains an ultra-high equivalent output resistance over a wide output-voltage range. A current mismatch between the discharging and charging current of less than 0.015 % has been simulated by using a 0.18-μm mixedsignal 1P6M 1.8-V CMOS process. The output current and the output voltage ranges of the proposed charge pump are 600 μA and 0.38−1.41 V, respectively.\",\"PeriodicalId\":352222,\"journal\":{\"name\":\"2022 IEEE 5th International Conference on Knowledge Innovation and Invention (ICKII )\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE 5th International Conference on Knowledge Innovation and Invention (ICKII )\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICKII55100.2022.9983569\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 5th International Conference on Knowledge Innovation and Invention (ICKII )","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICKII55100.2022.9983569","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们提出了一种超低电流失配CMOS电荷泵。利用级联码增益增强技术，该电荷泵在宽输出电压范围内具有超高的等效输出电阻。采用0.18 μm混合信号1P6M 1.8 v CMOS工艺，模拟了放电和充电电流失配小于0.015%的情况。该电荷泵的输出电流范围为600 μA，输出电压范围为0.38 ~ 1.41 V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

CMOS Charge Pump with Ultra-Low Current Mismatch

We propose an ultra-low current mismatch CMOS charge pump. With a cascode gain-boosting technique, the proposed charge pump obtains an ultra-high equivalent output resistance over a wide output-voltage range. A current mismatch between the discharging and charging current of less than 0.015 % has been simulated by using a 0.18-μm mixedsignal 1P6M 1.8-V CMOS process. The output current and the output voltage ranges of the proposed charge pump are 600 μA and 0.38−1.41 V, respectively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2022 IEEE 5th International Conference on Knowledge Innovation and Invention (ICKII )

自引率

0.00%

发文量