基于基片/栅极电位调谐的SiP波导嵌入式电子器件控制

2021 IEEE 17th International Conference on Group IV Photonics (GFP) Pub Date : 2021-12-01 DOI:10.1109/GFP51802.2021.9673981

A. Perino, F. Zanetto, M. Petrini, F. Toso, F. Morichetti, A. Melloni, G. Ferrari, M. Sampietro

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引用次数: 0

摘要

硅光子学芯片中的衬底电位通过抵消氧化电荷引起的自由载流子损耗来决定波导集成光电子器件的电学特性。通过衬底电位调谐，加热器控制和光电导率提高了几个数量级。

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Control of SiP Waveguide-Embedded Electronic Devices by Substrate/Gate Potential Tuning

The substrate potential in Silicon Photonics chips defines the electrical properties of waveguide-integrated optoelectronic devices by counteracting the depletion of free carriers caused by oxide charges. Heater control and photoconductivity enhancement by orders of magnitude is demonstrated by means of substrate potential tuning.

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来源期刊

2021 IEEE 17th International Conference on Group IV Photonics (GFP)

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