Cheng-Hung Lin, Cheng-Yen Chen, Dong-Ming Yeh, C.C. Yang
{"title":"采用光电化学湿蚀刻和相位掩模干涉技术制备光子晶体发光二极管","authors":"Cheng-Hung Lin, Cheng-Yen Chen, Dong-Ming Yeh, C.C. Yang","doi":"10.1109/INOW.2008.4634533","DOIUrl":null,"url":null,"abstract":"We demonstrate the high light-extraction efficiency by using the photoelectrochemical etching technique for forming photonic crystal structures on an InGaN/GaN quantum-well light-emitting diode through phase-mask interference. More than 90% increase of output power is observed.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photonic crystal light-emitting diode fabricated with photoelectrochemical wet etching and phase mask interference\",\"authors\":\"Cheng-Hung Lin, Cheng-Yen Chen, Dong-Ming Yeh, C.C. Yang\",\"doi\":\"10.1109/INOW.2008.4634533\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate the high light-extraction efficiency by using the photoelectrochemical etching technique for forming photonic crystal structures on an InGaN/GaN quantum-well light-emitting diode through phase-mask interference. More than 90% increase of output power is observed.\",\"PeriodicalId\":112256,\"journal\":{\"name\":\"2008 International Nano-Optoelectronics Workshop\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Nano-Optoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INOW.2008.4634533\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Nano-Optoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INOW.2008.4634533","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photonic crystal light-emitting diode fabricated with photoelectrochemical wet etching and phase mask interference
We demonstrate the high light-extraction efficiency by using the photoelectrochemical etching technique for forming photonic crystal structures on an InGaN/GaN quantum-well light-emitting diode through phase-mask interference. More than 90% increase of output power is observed.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
