研究复合半导体材料对SoC中漏极区扩展隧道晶体管的影响

2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI:10.1109/EDKCON.2018.8770392

Upasana, Hasti Kasundra, Mridula Gupta, M. Saxena

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引用次数: 1

摘要

本工作通过研究影响器件特性的各种参数的影响，并对器件进行相应的修改，描述了传统的SOI-LDMOS如何转化为漏极区扩展(DRE)隧道晶体管结构。基于材料的研究已经完成，以便在更高的击穿和更低的导通电阻方面为片上系统(SoC)应用即兴发挥器件功能。

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Studying the Impact of Compound Semiconductor Material in Drain Region Extended Tunnel Transistor for SoC Applications

This work describes how conventional SOI-LDMOS has been converted into Drain Region Extended (DRE) Tunnel Transistor kind of structure by studying effects of various parameters that affects the device characteristics and modifying the device accordingly. Material-based study has been done in order to improvise the device functioning for System on Chip (SoC) applications in terms of higher breakdown and lower on-resistance.

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2018 IEEE Electron Devices Kolkata Conference (EDKCON)

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