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垂直高斯掺杂双栅mosfet通道电位和阈值电压的二维解析模型

2009 International Multimedia, Signal Processing and Communication Technologies Pub Date : 2009-03-14 DOI:10.1109/MSPCT.2009.5164172
P. Tiwari, Surendra Kumar, S. Mittal, Vaibhav Srivastava, Utkarsh Pandey, S. Jit
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引用次数: 43

摘要

本文建立了沟道中垂直高斯掺杂的对称双栅mosfet的势函数和阈值电压的二维解析模型。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile
The paper presents a 2D analytical model for the potential function and threshold voltage of symmetric Double-Gate (DG) MOSFETs with vertical Gaussian doping profile in the channel.
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来源期刊
2009 International Multimedia, Signal Processing and Communication Technologies
2009 International Multimedia, Signal Processing and Communication Technologies
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