一种自洽k·p薛定谔和泊松方程的自适应网格算法

2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI:10.1109/IWCE.2014.6865845

P. Chang, Xiaoyan Liu, L. Zeng, K. Wei, G. Du

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引用次数: 6

摘要

采用微观方法计算了超薄体(UTB) InSb-OI器件的空穴迁移率。采用自适应网格算法对二维k空间进行离散化。通过自一致性地求解6波段k·p Schrödinger和泊松方程，得到了准确的价带结构。利用Kubo-Greenwood形式计算空穴迁移率，考虑非极性声子和光学声子、极性光学声子和表面粗糙度散射机制。

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An adaptive grid algorithm for self-consistent k·p Schrodinger and Poisson equations in UTB InSb-based pMOSFETs

Hole mobility in ultra-thin body (UTB) InSb-OI devices is calculated by a microscopic approach. An adaptive grid algorithm is employed to discretize 2-D k space. The accurate valence band structures are obtained via solving the 6-band k·p Schrödinger and Poisson equations self-consistently. Hole mobility is computed using the Kubo-Greenwood formalism accounting for nonpolar acoustic and optical phonons, polar optical phonons, and surface roughness scattering mechanisms.

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2014 International Workshop on Computational Electronics (IWCE)

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