基于氧化铪的铁电存储器:我们准备好应用了吗?

K. Seidel, D. Lehninger, F. Müller, Y. Raffel, A. Sünbül, Ricardo Revello, R. Hoffmann, S. De, T. Kämpfe, M. Lederer
{"title":"基于氧化铪的铁电存储器:我们准备好应用了吗?","authors":"K. Seidel, D. Lehninger, F. Müller, Y. Raffel, A. Sünbül, Ricardo Revello, R. Hoffmann, S. De, T. Kämpfe, M. Lederer","doi":"10.1109/IMW56887.2023.10145945","DOIUrl":null,"url":null,"abstract":"In this paper we discuss the current research status of ferroelectric memory solutions and reflect it with application requirements. In focus are mainly three promising emerging memory device technologies based on ferroelectric (FE) hafnium oxide: front-end of line (FEoL) implemented FeFET, and the two FE-capacitor based solutions FeRAM and ITIC FeFET. These device technologies are discussed with respect to aspects like scaling opportunity, reliability, and maturity level, reflecting with current and future application requirements as well as conventional memory solutions.","PeriodicalId":153429,"journal":{"name":"2023 IEEE International Memory Workshop (IMW)","volume":"46 6 Pt 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?\",\"authors\":\"K. Seidel, D. Lehninger, F. Müller, Y. Raffel, A. Sünbül, Ricardo Revello, R. Hoffmann, S. De, T. Kämpfe, M. Lederer\",\"doi\":\"10.1109/IMW56887.2023.10145945\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we discuss the current research status of ferroelectric memory solutions and reflect it with application requirements. In focus are mainly three promising emerging memory device technologies based on ferroelectric (FE) hafnium oxide: front-end of line (FEoL) implemented FeFET, and the two FE-capacitor based solutions FeRAM and ITIC FeFET. These device technologies are discussed with respect to aspects like scaling opportunity, reliability, and maturity level, reflecting with current and future application requirements as well as conventional memory solutions.\",\"PeriodicalId\":153429,\"journal\":{\"name\":\"2023 IEEE International Memory Workshop (IMW)\",\"volume\":\"46 6 Pt 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE International Memory Workshop (IMW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW56887.2023.10145945\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW56887.2023.10145945","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文讨论了铁电存储解决方案的研究现状,并结合应用需求进行了反映。重点介绍了三种基于铁电(FE)氧化铪的新兴存储器件技术:线前端(FEoL)实现的ffet,以及两种基于FE电容器的解决方案FeRAM和ITIC ffet。这些设备技术在扩展机会、可靠性和成熟度级别等方面进行了讨论,反映了当前和未来的应用程序需求以及传统的内存解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?
In this paper we discuss the current research status of ferroelectric memory solutions and reflect it with application requirements. In focus are mainly three promising emerging memory device technologies based on ferroelectric (FE) hafnium oxide: front-end of line (FEoL) implemented FeFET, and the two FE-capacitor based solutions FeRAM and ITIC FeFET. These device technologies are discussed with respect to aspects like scaling opportunity, reliability, and maturity level, reflecting with current and future application requirements as well as conventional memory solutions.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信