S. Barbieri, J. Alton, M. Evans, S. Dhillon, H. Beere, E. Linfield, A. Davies, D. Ritchie, R. Kohler, A. Tredicucci, F. Beltram
{"title":"连续波太赫兹量子级联激光器","authors":"S. Barbieri, J. Alton, M. Evans, S. Dhillon, H. Beere, E. Linfield, A. Davies, D. Ritchie, R. Kohler, A. Tredicucci, F. Beltram","doi":"10.1109/THZ.2002.1037602","DOIUrl":null,"url":null,"abstract":"Reports continuous wave operation of a 4.4 THz unipolar injection quantum cascade laser grown in the AlGaAs/GaAs materials system by molecular beam epitaxy. The device operates at 4 K with a threshold current of 160 mA, and an output power of /spl sim/25 /spl mu/W. In pulsed mode the maximum operating temperature is 52 K with a threshold current of 108 mA at 4 K.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Continuous wave terahertz quantum cascade laser\",\"authors\":\"S. Barbieri, J. Alton, M. Evans, S. Dhillon, H. Beere, E. Linfield, A. Davies, D. Ritchie, R. Kohler, A. Tredicucci, F. Beltram\",\"doi\":\"10.1109/THZ.2002.1037602\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Reports continuous wave operation of a 4.4 THz unipolar injection quantum cascade laser grown in the AlGaAs/GaAs materials system by molecular beam epitaxy. The device operates at 4 K with a threshold current of 160 mA, and an output power of /spl sim/25 /spl mu/W. In pulsed mode the maximum operating temperature is 52 K with a threshold current of 108 mA at 4 K.\",\"PeriodicalId\":143116,\"journal\":{\"name\":\"Proceedings, IEEE Tenth International Conference on Terahertz Electronics\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings, IEEE Tenth International Conference on Terahertz Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/THZ.2002.1037602\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/THZ.2002.1037602","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reports continuous wave operation of a 4.4 THz unipolar injection quantum cascade laser grown in the AlGaAs/GaAs materials system by molecular beam epitaxy. The device operates at 4 K with a threshold current of 160 mA, and an output power of /spl sim/25 /spl mu/W. In pulsed mode the maximum operating temperature is 52 K with a threshold current of 108 mA at 4 K.
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