具有稳健光电过载的高速InGaAs/InAlAs SACM雪崩光电二极管

2019 IEEE Photonics Conference (IPC) Pub Date : 2019-09-01 DOI:10.1109/IPCon.2019.8908281

J. Huang, H. S. Chang, Y. Jan, C. Ni, H. Chen, Emin Chou

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引用次数: 0

摘要

我们研究了高速InGaAs/InAlAs雪崩光电二极管的光学和电气过载，用于未来的PON OLT和ONU应用。我们成功地抑制了表面电荷积累和倍增层结击穿，实现了+4dBm的鲁棒光学过载。提出了光应力作用下表面态电荷积累的物理模型。

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High-Speed InGaAs/InAlAs SACM Avalanche Photodiodes with Robust Optical & Electrical Overload

We study the optical and electrical overload of high-speed InGaAs/InAlAs avalanche photodiodes for future PON OLT and ONU applications. We achieve robust optical overload at +4dBm with successful suppression of surface charge accumulation and multiplication-layer junction breakdown. Physical model of surface state charge accumulation under optical stress is also presented.

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2019 IEEE Photonics Conference (IPC)

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