90nm制程标准LVCMOS I/O缓冲器设计要点及解决方案

P. Kannan, K. Raghunathan, S. Jayaraman
{"title":"90nm制程标准LVCMOS I/O缓冲器设计要点及解决方案","authors":"P. Kannan, K. Raghunathan, S. Jayaraman","doi":"10.1109/AFRCON.2007.4401475","DOIUrl":null,"url":null,"abstract":"Low voltage complementary metal oxide semiconductor (LVCMOS) buffers provide single ended IO interface to the external devices in system on chip (SoC) designs. This paper covers functional operations of basic blocks of the LVCMOS output buffer and input buffer in detail and the design considerations and challenges at each phase of the design. It also explains how the phenomena such as the hot carrier effect, gate oxide integrity and the like affect the performance and reliability of the buffer and the techniques employed to cope with the effects.","PeriodicalId":112129,"journal":{"name":"AFRICON 2007","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Aspects and solutions to designing standard LVCMOS I/O buffers in 90nm process\",\"authors\":\"P. Kannan, K. Raghunathan, S. Jayaraman\",\"doi\":\"10.1109/AFRCON.2007.4401475\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low voltage complementary metal oxide semiconductor (LVCMOS) buffers provide single ended IO interface to the external devices in system on chip (SoC) designs. This paper covers functional operations of basic blocks of the LVCMOS output buffer and input buffer in detail and the design considerations and challenges at each phase of the design. It also explains how the phenomena such as the hot carrier effect, gate oxide integrity and the like affect the performance and reliability of the buffer and the techniques employed to cope with the effects.\",\"PeriodicalId\":112129,\"journal\":{\"name\":\"AFRICON 2007\",\"volume\":\"96 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"AFRICON 2007\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AFRCON.2007.4401475\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"AFRICON 2007","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AFRCON.2007.4401475","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

在片上系统(SoC)设计中,低压互补金属氧化物半导体(LVCMOS)缓冲器为外部设备提供单端IO接口。本文详细介绍了LVCMOS输出缓冲器和输入缓冲器基本模块的功能操作,以及设计各阶段的设计注意事项和挑战。说明了热载子效应、栅极氧化物完整性等现象如何影响缓冲器的性能和可靠性,以及应对这些影响所采用的技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Aspects and solutions to designing standard LVCMOS I/O buffers in 90nm process
Low voltage complementary metal oxide semiconductor (LVCMOS) buffers provide single ended IO interface to the external devices in system on chip (SoC) designs. This paper covers functional operations of basic blocks of the LVCMOS output buffer and input buffer in detail and the design considerations and challenges at each phase of the design. It also explains how the phenomena such as the hot carrier effect, gate oxide integrity and the like affect the performance and reliability of the buffer and the techniques employed to cope with the effects.
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