用改进的Gummel-Poon模型改进了BJTs参数的封闭表达式

A. Nadeem, W. Eisenstadt
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引用次数: 2

摘要

当先前报道的封闭形式表达式用于预测封装器件的小信号s参数时,观察到明显的差异,特别是相位。通过本文提出的改进的闭合式表达式,通过增加外部基极-集电极电容,在幅值和相位方面的总体情况都得到了显著改善。使用改进的Gummel-Poon模型的测量值和预测值之间的震级差异已从4 dB减小到不到2 dB。测量相位与计算相位在任何点的误差不超过8度,而基于本征模型的表达式大大低估了封装器件的相位
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improved closed-form expressions for S-parameters of BJTs using modified Gummel-Poon model
Noticeable differences particularly in phase were observed when closed-form expressions reported earlier were employed to predict small-signal S-parameters for the packaged devices. With improved close-form expressions presented in this paper, the overall situation both in terms of magnitude and phase has improved significantly by adding extrinsic base-to-collector capacitance. The difference in magnitude between measured and predicted using a modified Gummel-Poon model has reduced from 4 dB to less than 2 dB. The error between measure and calculated phase is no more than 8 degrees at any point whereas the expressions based on the intrinsic model greatly underestimated the phase for packaged devices
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