Investigations of various SRAM cell structures for leakage energy reduction

In this Paper different SRAM (Static Random Access Memories) cells are studied and compared w.r.t. their power dissipations and current leakage. These different studied structures are also compared with a normal 6-T SRAM cell, which is simulated under 180nm technology. As per outlooks some of the studied improved structures have less power consumptions then the regular 6-T SRAM cell. The static energy drop is clear but this also displays that it didn't came down as per expectation level. The possible causes are diverse, nevertheless, it is agreed that the other factors cause increment in dynamic leakage energy, which possibly is a reason for such results. However there is some work done in such case also, that has been discussed in later half of the paper. The total reduction in dissipation for the studied techniques was found to be in the range of 35%–66% approximately.