非常规非侵入式测量和毫米波器件建模

V. Niculae, V. Teppati, U. Pisani
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引用次数: 0

摘要

本文研究了一种快速、非侵入式和低成本的方法来表征和建模应用于毫米波频率的平面器件。在这些频率下的表征过程要求在校准算法中实现真实的校准标准模型。在高达36 GHz的频率下,分析了表征过程中出现的几个参数的影响。肖特基二极管在微波频率下的表征和建模以及在毫米波频率下的进一步可能应用的一个例子强调了所提出的方法提供的良好精度水平。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Unconventional non-intrusive measurement and modeling of millimeter-wave devices
A fast, non-intrusive and low-cost methodology for characterizing and modeling planar devices with applications at millimeter-wave frequencies is investigated in this paper. The characterization process at such frequencies asks for the implementation of the real calibration standards models in the calibration algorithm. The influence of several parameters that appear in the characterization process has been analyzed for frequencies up to 36 GHz. An example of a Schottky diode characterization and modeling at microwave frequencies with further possible applications at millimeter-wave frequencies underlines the good accuracy level provided by the proposed methodology.
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