{"title":"非常规非侵入式测量和毫米波器件建模","authors":"V. Niculae, V. Teppati, U. Pisani","doi":"10.1109/IMTC.2003.1207953","DOIUrl":null,"url":null,"abstract":"A fast, non-intrusive and low-cost methodology for characterizing and modeling planar devices with applications at millimeter-wave frequencies is investigated in this paper. The characterization process at such frequencies asks for the implementation of the real calibration standards models in the calibration algorithm. The influence of several parameters that appear in the characterization process has been analyzed for frequencies up to 36 GHz. An example of a Schottky diode characterization and modeling at microwave frequencies with further possible applications at millimeter-wave frequencies underlines the good accuracy level provided by the proposed methodology.","PeriodicalId":135321,"journal":{"name":"Proceedings of the 20th IEEE Instrumentation Technology Conference (Cat. No.03CH37412)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Unconventional non-intrusive measurement and modeling of millimeter-wave devices\",\"authors\":\"V. Niculae, V. Teppati, U. Pisani\",\"doi\":\"10.1109/IMTC.2003.1207953\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fast, non-intrusive and low-cost methodology for characterizing and modeling planar devices with applications at millimeter-wave frequencies is investigated in this paper. The characterization process at such frequencies asks for the implementation of the real calibration standards models in the calibration algorithm. The influence of several parameters that appear in the characterization process has been analyzed for frequencies up to 36 GHz. An example of a Schottky diode characterization and modeling at microwave frequencies with further possible applications at millimeter-wave frequencies underlines the good accuracy level provided by the proposed methodology.\",\"PeriodicalId\":135321,\"journal\":{\"name\":\"Proceedings of the 20th IEEE Instrumentation Technology Conference (Cat. No.03CH37412)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 20th IEEE Instrumentation Technology Conference (Cat. No.03CH37412)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMTC.2003.1207953\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 20th IEEE Instrumentation Technology Conference (Cat. No.03CH37412)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMTC.2003.1207953","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Unconventional non-intrusive measurement and modeling of millimeter-wave devices
A fast, non-intrusive and low-cost methodology for characterizing and modeling planar devices with applications at millimeter-wave frequencies is investigated in this paper. The characterization process at such frequencies asks for the implementation of the real calibration standards models in the calibration algorithm. The influence of several parameters that appear in the characterization process has been analyzed for frequencies up to 36 GHz. An example of a Schottky diode characterization and modeling at microwave frequencies with further possible applications at millimeter-wave frequencies underlines the good accuracy level provided by the proposed methodology.