一种小型横向沟槽电极IGBT，具有改进的锁存和击穿特性

Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology. TENCON 2001 (Cat. No.01CH37239) Pub Date : 2001-08-19 DOI:10.1109/TENCON.2001.949638

E. Kang, S. Moon, M. Sung

{"title":"一种小型横向沟槽电极IGBT，具有改进的锁存和击穿特性","authors":"E. Kang, S. Moon, M. Sung","doi":"10.1109/TENCON.2001.949638","DOIUrl":null,"url":null,"abstract":"A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19 /spl mu/m. Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130 V. Conventional LIGBT and LTIGBT of the same size were 60 V and 100 V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately.","PeriodicalId":358168,"journal":{"name":"Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology. TENCON 2001 (Cat. No.01CH37239)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A small sized lateral trench electrode IGBT having improved latch-up and breakdown characteristics for power electronics\",\"authors\":\"E. Kang, S. Moon, M. Sung\",\"doi\":\"10.1109/TENCON.2001.949638\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19 /spl mu/m. Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130 V. Conventional LIGBT and LTIGBT of the same size were 60 V and 100 V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately.\",\"PeriodicalId\":358168,\"journal\":{\"name\":\"Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology. TENCON 2001 (Cat. No.01CH37239)\",\"volume\":\"84 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-08-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology. TENCON 2001 (Cat. No.01CH37239)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TENCON.2001.949638\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology. TENCON 2001 (Cat. No.01CH37239)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.2001.949638","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

提出了一种小型侧沟电极绝缘栅双极晶体管(LTEIGBT)，改进了传统侧沟电极绝缘栅双极晶体管(light)和侧沟栅双极晶体管(LTIGBT)的特性。将LTEIGBT全电极替换为沟槽式电极。设计LTEIGBT时，装置宽度为19 /spl mu/m。LTEIGBT的锁存电流密度比传统的LTEIGBT和LTEIGBT分别提高了10倍和2.3倍。LTEIGBT正向阻断电压为130 V。相同尺寸的常规light和lighbt分别为60 V和100 V。由于所提出的LTEIGBT是由沟槽型电极构成的，导致电场向沟槽氧化层移动，导致击穿现象的发生。

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A small sized lateral trench electrode IGBT having improved latch-up and breakdown characteristics for power electronics

A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19 /spl mu/m. Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130 V. Conventional LIGBT and LTIGBT of the same size were 60 V and 100 V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately.

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来源期刊

Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology. TENCON 2001 (Cat. No.01CH37239)

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