mod衍生SrBi2Ta2O9薄膜在电场中结晶的性质

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI:10.1109/ISAF.2007.4393186

C. Leu, Tzong-Dar Wu, F. Hsu

{"title":"mod衍生SrBi2Ta2O9薄膜在电场中结晶的性质","authors":"C. Leu, Tzong-Dar Wu, F. Hsu","doi":"10.1109/ISAF.2007.4393186","DOIUrl":null,"url":null,"abstract":"SrBi2Ta2O9 (SBT) films with thickness of about 200 nm were prepared on Pt/Ta/SiO2/Si substrates by metal-organic decomposition (MOD) method. A high electric field (250 kV/cm) was applied to SBT film during 750degC furnace annealing in atmosphere for 40 min. This applied electric field does some impacts on the microstructures and electrical properties of SBT regardless of the states of electric field. Under an electric field, the films exhibited stronger a/b-axis preferential orientation in Bismuth-layered structure (BLS) phase and a little higher ratio of second phase. In addition, parts of the granular grains grew into rod-like grains. As a result, the electrical properties of SBT thin films were improved by the application of electric field.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Properties of MOD-derived SrBi2Ta2O9 thin films crystallized in an electric field\",\"authors\":\"C. Leu, Tzong-Dar Wu, F. Hsu\",\"doi\":\"10.1109/ISAF.2007.4393186\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SrBi2Ta2O9 (SBT) films with thickness of about 200 nm were prepared on Pt/Ta/SiO2/Si substrates by metal-organic decomposition (MOD) method. A high electric field (250 kV/cm) was applied to SBT film during 750degC furnace annealing in atmosphere for 40 min. This applied electric field does some impacts on the microstructures and electrical properties of SBT regardless of the states of electric field. Under an electric field, the films exhibited stronger a/b-axis preferential orientation in Bismuth-layered structure (BLS) phase and a little higher ratio of second phase. In addition, parts of the granular grains grew into rod-like grains. As a result, the electrical properties of SBT thin films were improved by the application of electric field.\",\"PeriodicalId\":321007,\"journal\":{\"name\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2007.4393186\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2007.4393186","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用金属有机分解(MOD)方法在Pt/Ta/SiO2/Si衬底上制备了厚度约200 nm的SrBi2Ta2O9 (SBT)薄膜。对SBT薄膜施加250 kV/cm的高电场，在750℃的炉内气氛退火40 min，无论电场状态如何，都对SBT薄膜的组织和电学性能有一定的影响。在电场作用下，薄膜在铋层状结构(BLS)相中表现出较强的a/b轴优先取向，第二相的比例略高。另外，部分颗粒发育成棒状颗粒。结果表明，电场的作用改善了SBT薄膜的电学性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Properties of MOD-derived SrBi2Ta2O9 thin films crystallized in an electric field

SrBi2Ta2O9 (SBT) films with thickness of about 200 nm were prepared on Pt/Ta/SiO2/Si substrates by metal-organic decomposition (MOD) method. A high electric field (250 kV/cm) was applied to SBT film during 750degC furnace annealing in atmosphere for 40 min. This applied electric field does some impacts on the microstructures and electrical properties of SBT regardless of the states of electric field. Under an electric field, the films exhibited stronger a/b-axis preferential orientation in Bismuth-layered structure (BLS) phase and a little higher ratio of second phase. In addition, parts of the granular grains grew into rod-like grains. As a result, the electrical properties of SBT thin films were improved by the application of electric field.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

自引率

0.00%

发文量