{"title":"使用多结表面隧道晶体管的三值d触发器和移位寄存器","authors":"T. Uemura, T. Baba","doi":"10.1109/ISMVL.2001.924559","DOIUrl":null,"url":null,"abstract":"A three-valued D-flip-flop (D-FF) circuit and a two-stage shift register built from InGaAs-based multiple-junction surface tunnel transistors (MJSTT) and Si-based metal-oxide-semiconductor field effect transistors (MOSFET) have been demonstrated. Due to the combination of the MJSTT's latching function and the MOSFET's switching function, the number of devices required for the D-FF circuit was greatly reduced to two from the thirty required for the FET-only circuit.","PeriodicalId":297353,"journal":{"name":"Proceedings 31st IEEE International Symposium on Multiple-Valued Logic","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"A three-valued D-flip-flop and shift register using multiple-junction surface tunnel transistors\",\"authors\":\"T. Uemura, T. Baba\",\"doi\":\"10.1109/ISMVL.2001.924559\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A three-valued D-flip-flop (D-FF) circuit and a two-stage shift register built from InGaAs-based multiple-junction surface tunnel transistors (MJSTT) and Si-based metal-oxide-semiconductor field effect transistors (MOSFET) have been demonstrated. Due to the combination of the MJSTT's latching function and the MOSFET's switching function, the number of devices required for the D-FF circuit was greatly reduced to two from the thirty required for the FET-only circuit.\",\"PeriodicalId\":297353,\"journal\":{\"name\":\"Proceedings 31st IEEE International Symposium on Multiple-Valued Logic\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 31st IEEE International Symposium on Multiple-Valued Logic\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISMVL.2001.924559\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 31st IEEE International Symposium on Multiple-Valued Logic","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISMVL.2001.924559","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A three-valued D-flip-flop and shift register using multiple-junction surface tunnel transistors
A three-valued D-flip-flop (D-FF) circuit and a two-stage shift register built from InGaAs-based multiple-junction surface tunnel transistors (MJSTT) and Si-based metal-oxide-semiconductor field effect transistors (MOSFET) have been demonstrated. Due to the combination of the MJSTT's latching function and the MOSFET's switching function, the number of devices required for the D-FF circuit was greatly reduced to two from the thirty required for the FET-only circuit.
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