Nonlinear transmission line as a large signal model for HEMT

This paper presents a new large signal modeling technique for FET devices. The proposed method employs distributed approach using nonlinear transmission line based on GCA(Gradual Channel Approximation). The modeling procedure needs only a few S parameter measurements under cold bias condition and simple I-V measurements. The former is used to extract the channel conductance and gate capacitance and the latter to optimize the velocity-field relation. The large signal model can be directly established without any active biased S parameter measurements, ECP extraction, and laborious fitting procedures required in conventional empirical modelings.