CNTFET-based Multiplexer Unit using INDEP Method

The integration of digital circuits and the scaling down of complementary metal oxide semiconductor (CMOS) technology are closely related. As CMOS feature size continues to shrink, it eventually reaches the nanoscale region, which has raised the effects like Short Channel Effect (SCE), leakage power, and interconnects delay. Therefore, to overcome these limits and improve the efficiency of digital circuits, researchers are looking into other nanoscale technologies that can be used in upcoming technological advancements. Due to the excellent properties, Carbon Nanotube Field Effect Transistor (CNTFET) is going to use in the replacement of CMOS technology. In the current study, a CNTFET-based multiplexer using input dependent (INDEP) leakage reduction technique is proposed for a 32nm technology node. In this work, a comparative study of conventional and proposed INDEP-based multiplexers is carried out for power consumption, delay, and power delay product (PDP). It is observed that the proposed CNTFET-based multiplexer using the INDEP method is energy efficient and leads to significant improvement in leakage power and PDP compared to the conventional architecture.