采用气隙式薄膜谐振器的400MHz单片振荡器

H. Satoh, H. Suzuki, C. Takahashi, C. Narahara, Y. Ebata
{"title":"采用气隙式薄膜谐振器的400MHz单片振荡器","authors":"H. Satoh, H. Suzuki, C. Takahashi, C. Narahara, Y. Ebata","doi":"10.1109/ULTSYM.1987.198984","DOIUrl":null,"url":null,"abstract":"A preliminary study has been made on the fabrication technique and on the spurious response of a self-supported airgap type resonator on a SigN4 passivation film covering a Si substrate with the purpose ot bipolar monolithic oscillator application. A prototype 400MHz fully integrated one-chip oscillator consisting of a Colpitts-type circuit and the resonator is developed. The developed miniature oscillator is about lmm square in actual size. A typical performance is; 90dB for C/N (N: 20KHz offset from the carrier and 16KHz band width), 0- -5ppm/ .C for the 1st order temperature coefficient of frequency arid -0.029ppm/OC2 for the 2nd order temperature coefficient.","PeriodicalId":309261,"journal":{"name":"IEEE 1987 Ultrasonics Symposium","volume":"2011 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"A 400MHz One-Chip Oscillator Using an Air-Gap Type Thin Film Resonator\",\"authors\":\"H. Satoh, H. Suzuki, C. Takahashi, C. Narahara, Y. Ebata\",\"doi\":\"10.1109/ULTSYM.1987.198984\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A preliminary study has been made on the fabrication technique and on the spurious response of a self-supported airgap type resonator on a SigN4 passivation film covering a Si substrate with the purpose ot bipolar monolithic oscillator application. A prototype 400MHz fully integrated one-chip oscillator consisting of a Colpitts-type circuit and the resonator is developed. The developed miniature oscillator is about lmm square in actual size. A typical performance is; 90dB for C/N (N: 20KHz offset from the carrier and 16KHz band width), 0- -5ppm/ .C for the 1st order temperature coefficient of frequency arid -0.029ppm/OC2 for the 2nd order temperature coefficient.\",\"PeriodicalId\":309261,\"journal\":{\"name\":\"IEEE 1987 Ultrasonics Symposium\",\"volume\":\"2011 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1987 Ultrasonics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULTSYM.1987.198984\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1987 Ultrasonics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULTSYM.1987.198984","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19

摘要

本文初步研究了用于双极单片振荡器的自支撑气隙型谐振器在覆盖硅衬底的SigN4钝化膜上的制备工艺和杂散响应。研制了一个由科尔皮茨型电路和谐振器组成的400MHz全集成单片振荡器样机。所研制的微型振荡器实际尺寸约为1平方毫米。典型的表现是;C/N (N:距载波20KHz偏移和16KHz带宽)为90dB,频率的一阶温度系数为0- 5ppm/ .C,二阶温度系数为-0.029ppm/OC2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 400MHz One-Chip Oscillator Using an Air-Gap Type Thin Film Resonator
A preliminary study has been made on the fabrication technique and on the spurious response of a self-supported airgap type resonator on a SigN4 passivation film covering a Si substrate with the purpose ot bipolar monolithic oscillator application. A prototype 400MHz fully integrated one-chip oscillator consisting of a Colpitts-type circuit and the resonator is developed. The developed miniature oscillator is about lmm square in actual size. A typical performance is; 90dB for C/N (N: 20KHz offset from the carrier and 16KHz band width), 0- -5ppm/ .C for the 1st order temperature coefficient of frequency arid -0.029ppm/OC2 for the 2nd order temperature coefficient.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信