基于0.15 μm GaAs pHEMT技术的x波段MMIC宽带低噪声放大器

2008 18th International Crimean Conference - Microwave & Telecommunication Technology Pub Date : 2008-11-18 DOI:10.1109/CRMICO.2008.4676291

V. Mokerov, L. Babak, Y. Fedorov, M. Cherkashin, F.I. Sheherman, A. Bugaev, A. L. Kuznetsov, D. L. Gnatyuk

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引用次数: 0

摘要

介绍了基于0.15 μ m GaAs pHEMT技术的2级和3级x波段MMIC宽带低噪声放大器(LNApsilas)的设计和制造。介绍了2级和3级x波段MMIC宽带LNApsilas的设计和制作。采用ldquovisualrdquo设计CAD工具设计了LNApsilas。mmicsilas采用0.15 μ m pHEMT GaAs技术实现。给出了测量的散射参数和噪声系数。放大器的频率范围从3 GHz到14 GHz，增益为20....21分贝和27…相应的是29db。MMIC LNApsilas可以作为不同微波系统的构建模块。

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X-band MMIC broadband low-noise amplifiers based on 0.15 μm GaAs pHEMT technology

The design and fabrication of 2- and 3-stage X-band MMIC broadband low-noise amplifiers (LNApsilas) based on 0.15 mum GaAs pHEMT technology is presented. The design and fabrication of 2- and 3-stage X-band MMIC broadband LNApsilas is described. LNApsilas are designed with using ldquovisualrdquo design CAD tools. MMICpsilas are implemented with 0.15 mum pHEMT GaAs technology. The measured scattering parameters and noise figure are presented. Amplifiers cover frequency range from 3 GHz to 14 GHz with the gain of 20....21 dB and 27...29 dB, correspondingly. MMIC LNApsilas can be used as building blocks in different microwave systems.

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2008 18th International Crimean Conference - Microwave & Telecommunication Technology

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