High Speed-Low Power GNRFET based Digital to Analog Converters for ULSI applications

In this papr, A 2-bit, 3-bit, and 4-bit DACs using newly emerged transistor technology known as Graphene Nano Ribbon Field Effect Transistor (GNRFET) technology were developed. A channel length of 10nm for the GNRFET device with supply voltage of 0.7V was incorporated in the design and simulated via ADS (Advanced Digital System) platform. Biasing with current mirror topology was used for highly efficient small size implementation. The power consumption was analyzed for all three devices. The design showed a full range linear input region within the 0.7 V supply. The signal to noise distortion ratio (SNDR) was 25.8 for the 4-bit DAC. The findings of this design conclude that the proposed DAC is more suitable for high speed nano electromechanical systems (NEMs), computer architecture and memory cells, among other applications.