{"title":"基于WS2-QD/单层mos20d /2D混合异质结构的高性能宽带光电探测器","authors":"Venkatarao Selamneni, Chandra sekhar Reddy Kolli, Parikshit Sahatiya","doi":"10.1109/ICEE56203.2022.10118313","DOIUrl":null,"url":null,"abstract":"Even though multiple reports are available on photodetectors, the problem that still remain unaddressed is the low photoresponsivity while trying to increase the range of detection. In this work, broadband (UV-visible) photodetector was demonstrated by integrating zero-dimensional (0D) WS2-QDs on two-dimensional (2D) monolayer MoS2. WS2-QDs are sensitive to UV light, and MoS2 is sensitive to visible light. The maximum responsivity of the fabricated WS2-QDs/MoS2 device was found to be ~ 392 A/W. In this work, not only the photodetection range but also photoresponsivity is improved, which is a major step in the design of next-generation 2D materials based optoelectronics.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"2008 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-performance Broadband Photodetector based on a WS2-QD/monolayer MoS2 0D/2D Mixed-dimensional Heterostructure\",\"authors\":\"Venkatarao Selamneni, Chandra sekhar Reddy Kolli, Parikshit Sahatiya\",\"doi\":\"10.1109/ICEE56203.2022.10118313\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Even though multiple reports are available on photodetectors, the problem that still remain unaddressed is the low photoresponsivity while trying to increase the range of detection. In this work, broadband (UV-visible) photodetector was demonstrated by integrating zero-dimensional (0D) WS2-QDs on two-dimensional (2D) monolayer MoS2. WS2-QDs are sensitive to UV light, and MoS2 is sensitive to visible light. The maximum responsivity of the fabricated WS2-QDs/MoS2 device was found to be ~ 392 A/W. In this work, not only the photodetection range but also photoresponsivity is improved, which is a major step in the design of next-generation 2D materials based optoelectronics.\",\"PeriodicalId\":281727,\"journal\":{\"name\":\"2022 IEEE International Conference on Emerging Electronics (ICEE)\",\"volume\":\"2008 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEE56203.2022.10118313\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEE56203.2022.10118313","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-performance Broadband Photodetector based on a WS2-QD/monolayer MoS2 0D/2D Mixed-dimensional Heterostructure
Even though multiple reports are available on photodetectors, the problem that still remain unaddressed is the low photoresponsivity while trying to increase the range of detection. In this work, broadband (UV-visible) photodetector was demonstrated by integrating zero-dimensional (0D) WS2-QDs on two-dimensional (2D) monolayer MoS2. WS2-QDs are sensitive to UV light, and MoS2 is sensitive to visible light. The maximum responsivity of the fabricated WS2-QDs/MoS2 device was found to be ~ 392 A/W. In this work, not only the photodetection range but also photoresponsivity is improved, which is a major step in the design of next-generation 2D materials based optoelectronics.