基于WS2-QD/单层mos20d /2D混合异质结构的高性能宽带光电探测器

Venkatarao Selamneni, Chandra sekhar Reddy Kolli, Parikshit Sahatiya
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引用次数: 0

摘要

尽管有许多关于光电探测器的报道,但在试图增加探测范围的同时,低光响应性仍然是一个未解决的问题。在这项工作中,通过在二维(2D)单层MoS2上集成零维(0D) ws2 -量子点,展示了宽带(uv -可见光)光电探测器。WS2-QDs对紫外光敏感,而MoS2对可见光敏感。所制备的WS2-QDs/MoS2器件的最大响应度为~ 392 A/W。在这项工作中,不仅提高了光探测范围,而且提高了光响应性,这是设计下一代基于二维材料的光电子学的重要一步。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-performance Broadband Photodetector based on a WS2-QD/monolayer MoS2 0D/2D Mixed-dimensional Heterostructure
Even though multiple reports are available on photodetectors, the problem that still remain unaddressed is the low photoresponsivity while trying to increase the range of detection. In this work, broadband (UV-visible) photodetector was demonstrated by integrating zero-dimensional (0D) WS2-QDs on two-dimensional (2D) monolayer MoS2. WS2-QDs are sensitive to UV light, and MoS2 is sensitive to visible light. The maximum responsivity of the fabricated WS2-QDs/MoS2 device was found to be ~ 392 A/W. In this work, not only the photodetection range but also photoresponsivity is improved, which is a major step in the design of next-generation 2D materials based optoelectronics.
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