M. Scholl, R. Wunderlich, S. Heinen, Tobias Saalfeld, Christoph Beyerstedt, Fabian Speicher, Jonas Meier, Michael Hanhart, Leo Rolff, V. Bonehi, M. Schrey
{"title":"一个32兆赫晶体振荡器与快速启动使用抖动注入和负电阻升压","authors":"M. Scholl, R. Wunderlich, S. Heinen, Tobias Saalfeld, Christoph Beyerstedt, Fabian Speicher, Jonas Meier, Michael Hanhart, Leo Rolff, V. Bonehi, M. Schrey","doi":"10.1109/ESSCIRC.2019.8902894","DOIUrl":null,"url":null,"abstract":"This work presents a fast start-up 32 MHz crystal oscillator for low power wireless transceivers. A highly efficient start-up technique combining dithered frequency injection and a negative resistance boost is proposed to reduce start-up time while maintaining low start-up energy. In measurements the proposed technique achieves a start-up time of 32.7 μs with 31.7 nJ startup energy enabling low power consumption in latency-driven applications. In steady state operation the oscillator has a power consumption of 181.6 μW. The circuit area of the proposed crystal oscillator is 0.058 mm2 in a 130 nm RF CMOS technology.","PeriodicalId":402948,"journal":{"name":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 32 MHz Crystal Oscillator with Fast Start-Up Using Dithered Injection and Negative Resistance Boost\",\"authors\":\"M. Scholl, R. Wunderlich, S. Heinen, Tobias Saalfeld, Christoph Beyerstedt, Fabian Speicher, Jonas Meier, Michael Hanhart, Leo Rolff, V. Bonehi, M. Schrey\",\"doi\":\"10.1109/ESSCIRC.2019.8902894\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a fast start-up 32 MHz crystal oscillator for low power wireless transceivers. A highly efficient start-up technique combining dithered frequency injection and a negative resistance boost is proposed to reduce start-up time while maintaining low start-up energy. In measurements the proposed technique achieves a start-up time of 32.7 μs with 31.7 nJ startup energy enabling low power consumption in latency-driven applications. In steady state operation the oscillator has a power consumption of 181.6 μW. The circuit area of the proposed crystal oscillator is 0.058 mm2 in a 130 nm RF CMOS technology.\",\"PeriodicalId\":402948,\"journal\":{\"name\":\"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2019.8902894\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2019.8902894","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 32 MHz Crystal Oscillator with Fast Start-Up Using Dithered Injection and Negative Resistance Boost
This work presents a fast start-up 32 MHz crystal oscillator for low power wireless transceivers. A highly efficient start-up technique combining dithered frequency injection and a negative resistance boost is proposed to reduce start-up time while maintaining low start-up energy. In measurements the proposed technique achieves a start-up time of 32.7 μs with 31.7 nJ startup energy enabling low power consumption in latency-driven applications. In steady state operation the oscillator has a power consumption of 181.6 μW. The circuit area of the proposed crystal oscillator is 0.058 mm2 in a 130 nm RF CMOS technology.