{"title":"ka波段单片砷化镓两级功率放大器","authors":"Y. Oda, T. Yoshida, K. Kai, S. Arai, S. Yanagawa","doi":"10.1109/MCS.1989.37257","DOIUrl":null,"url":null,"abstract":"The development of a Ka-band monolithic GaAs two-stage power amplifier with 3.6-mm total gate width is presented. The monolithic amplifier uses FETs with 1.2-mm and 2.4-mm gate widths for the first-stage and second-stage devices, respectively. It delivers an output power of 0.56 W, with a power gain of 7.2 dB, and a power-added efficiency of 15% at 28 GHz. Output power of more than 0.5 W is obtained over 27.5-28.5 GHz, with power gain exceeding 5 dB. The authors expect that further improvements in output power will be achieved through drain current optimization and a monolithic parallel combining of amplifiers.<<ETX>>","PeriodicalId":377911,"journal":{"name":"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium","volume":"2010 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Ka-band monolithic GaAs two-stage power amplifier\",\"authors\":\"Y. Oda, T. Yoshida, K. Kai, S. Arai, S. Yanagawa\",\"doi\":\"10.1109/MCS.1989.37257\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The development of a Ka-band monolithic GaAs two-stage power amplifier with 3.6-mm total gate width is presented. The monolithic amplifier uses FETs with 1.2-mm and 2.4-mm gate widths for the first-stage and second-stage devices, respectively. It delivers an output power of 0.56 W, with a power gain of 7.2 dB, and a power-added efficiency of 15% at 28 GHz. Output power of more than 0.5 W is obtained over 27.5-28.5 GHz, with power gain exceeding 5 dB. The authors expect that further improvements in output power will be achieved through drain current optimization and a monolithic parallel combining of amplifiers.<<ETX>>\",\"PeriodicalId\":377911,\"journal\":{\"name\":\"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium\",\"volume\":\"2010 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1989.37257\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1989.37257","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The development of a Ka-band monolithic GaAs two-stage power amplifier with 3.6-mm total gate width is presented. The monolithic amplifier uses FETs with 1.2-mm and 2.4-mm gate widths for the first-stage and second-stage devices, respectively. It delivers an output power of 0.56 W, with a power gain of 7.2 dB, and a power-added efficiency of 15% at 28 GHz. Output power of more than 0.5 W is obtained over 27.5-28.5 GHz, with power gain exceeding 5 dB. The authors expect that further improvements in output power will be achieved through drain current optimization and a monolithic parallel combining of amplifiers.<>
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