J. Gambino, A. Stamper, T. McDevitt, V. McGahay, S. Luce, T. Pricer, B. Porth, C. Senowitz, R. Kontra, M. Gibson, H. Wildman, A. Piper, C. Benson, T. Standaert, P. Biolsi, E. Cooney
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Integration of copper with low-k dielectrics for 0.13 /spl mu/m technology
The integration of Cu with low-k dielectrics poses a number of challenges. In this paper, we describe yield issues associated with integration of three different low-k dielectrics; FSG (fluorosilicate glass), OSG (organosilicate glass), and polymers. Process issues that are discussed include patterning of the dielectrics, cleaning of the Cu surface, and Cu polishing.
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